The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen­ erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy­ conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.

Neural Networks presents concepts of neural-network models and techniques of parallel distributed processing in a three-step approach: - A brief overview of the neural structure of the brain and the history of neural-network modeling introduces to associative memory, preceptrons, feature-sensitive networks, learning strategies, and practical applications. - The second part covers subjects like statistical physics of spin glasses, the mean-field theory of the Hopfield model, and the "space of interactions" approach to the storage capacity of neural networks. - The final part discusses nine programs with practical demonstrations of neural-network models. The software and source code in C are on a 3 1/2" MS-DOS diskette can be run with Microsoft, Borland, Turbo-C, or compatible compilers.

This book covers a variety of topics in the field of mechanical engineering, with a special focus on methods and technologies for modeling, simulation, and design of mechanical systems. Based on a set of papers presented at the 1st International Conference “Innovation in Engineering”, ICIE, held in Guimarães, Portugal, on June 28–30, 2021, it focuses on innovation in mechanical engineering, spanning from engineering design and testing of medical devices, evaluation of new materials and composites for different industrial applications, fatigue and stress analysis of mechanical structures, and application of new tools such as 3D printing, CAE 3D models, and decision support systems.

This multi-contributed volume provides a practical, applications-focused introduction to nonlinear acoustical techniques for nondestructive evaluation. Compared to linear techniques, nonlinear acoustical/ultrasonic techniques are much more sensitive to micro-cracks and other types of small distributed damages. Most materials and structures exhibit nonlinear behavior due to the formation of dislocation and micro-cracks from fatigue or other types of repetitive loadings well before detectable macro-cracks are formed.

This book highlights many fundamental aspects of optical fiber transmission engineering while also focusing on current state of the art applications and working examples of digital coherent optical communications. Major engineering themes are reviewed and analyzed in this book, including spectral and time-domain characteristics of multi-level pseudo-random PAM signals, optical QAM and SSB complex modulations and impulse response engineering of linear amplifiers used in next-generation Gbaud transmission systems.

Televisions, telephones, watches, calculators, robots, airplanes and space vehicles all depend on silicon chips. Life as we know it would hardly be possible without semiconductor devices. An understanding of how these devices work requires a detailed knowledge of the physics of semiconductors, including charge transport and the emission and absorption of electromagnetic waves. This book may serve both as a university textbook and as a reference for research and microelectronics engineering. Each section of the book begins with a description of an experiment. The theory is then developed as far as necessary to understand the experimental results. Everyone with high-school mathematics should be able to follow the calculations. The band structure calculations for the diamond and zinc blende types of lattice are supplemented with a personal computer program. Semiconductor physics developed most rapidly in the two decades following the invention of the transistor, and naturally most of the references date from this time. But recent developments such as the Gunn effect, the acoustoelectric effect, superlattices, quantum well structures, and the quantum Hall effect are also discussed. The exercises provided (answers to which are available) will greatly assist the student in consolidating the material presented. From the reviews:"This book is a must for any theoretical and experimental physicist working in the area of semiconductor physics." #Physicalia#1

Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re­ search has been devoted to the accumulation of experimental results, par­ ticularly about the artificially synthesised compounds. Significant ad­ vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf­ ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve­ lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there­ fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.

Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi­ neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro­ cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop­ ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi­ taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza­ tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.

High pressure science is a rapidly growing diverse fi. e1d. The high pressure technique has become a powerful tool for both the study and preparation of materials. In spi. te of the many high pressure conferences held in recent years, I felt that there was a need for scientists within a well-defined area (not bound merely by the common experimental technique) to meet in an atmosphere conducive to frank exchange and close interaction. In this spirit, the Cleveland State University hosted such a conference from July 20 to 22, 1977, in which the physics of solids under high pressures and at low tempera­ tures was specifically examined. Both the original and review papers presented at the conference and the candid discussions following their presentations appear in this volume. They clearly cover a rather complete spectrum of current research in the physics of solids at high pressures and low temperatures. I wish to thank the National Aeronautics and Space Administra­ tion, the Office of Naval Research and the National Science Founda­ tion for their financial support of the conference. In addition, I wish especially to thank Steinar Huang for his unceasing assistance in arranging this conference. I also wish to thank him and Francis Stephenson for their assistance in preparing this book. C. W. Chu, Chairman, International Conference on High Pressure and Low Temperature Physics v Contents HYDROGEN AND METAL-HYDRIDES (Chairman: I. Spain) PROSPECTS FOR METALLIC HYDROGEN 1 A. L.