"Disruptive Wide Bandgap Semiconductors: Technologies, and Their Applications" ed. by Yogesh Kumar Sharma

This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies.

Contents
1. Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry
2. TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors
3. Main Differences in Processing Si and SiC Devices
4. High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules
5. Status of SiC Products and Technology
6. GaN-Based Schottky Diode
7. Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors



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