Tags
Language
Tags
<<
June 2025
Su Mo Tu We Th Fr Sa
1 2 3 4 5 6 7
8 9 10 11 12 13 14
15 16 17 18 19 20 21
22 23 24 25 26 27 28
29 30 1 2 3 4 5
    Attention❗ To save your time, in order to download anything on this site, you must be registered 👉 HERE. If you do not have a registration yet, it is better to do it right away. ✌
    https://sophisticatedspectra.com/article/drosia-serenity-a-modern-oasis-in-the-heart-of-larnaca.2521391.html

    DROSIA SERENITY
    A Premium Residential Project in the Heart of Drosia, Larnaca
    ONLY TWO FLATS REMAIN!

    Modern and impressive architectural design with high-quality finishes Spacious 2-bedroom apartments with two verandas and smart layouts Penthouse units with private rooftop gardens of up to 63 m² Private covered parking for each apartment Exceptionally quiet location just 5–8 minutes from the marina, Finikoudes Beach, Metropolis Mall, and city center Quick access to all major routes and the highway Boutique-style building with only 8 apartments High-spec technical features including A/C provisions, solar water heater, and photovoltaic system setup.
    Whether for living or investment, this is a rare opportunity in a strategic and desirable location.

    1. Home
    2. eBooks & eLearning
    3. The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

    The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

    Posted By: DZ123
    Date: 23 May 2020 22:27:19
    The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

    Zhiqiang Li, "The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices"
    English | 2016 | ISBN: 366249681X | PDF | pages: 71 | 3.8 mb

    This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
    UPWARDS